In a quasi-one-dimensional electron gas formed in MIS structures (metal-insulator-semiconductor) or heterostructures (in the latter case, this is usually GaAs), the integer quantum Hall effect (IQHE) is observed at low temperatures and in strong magnetic fields. The essence of this effect is that, depending on the Hall resistance on the magnetic field, successive steps (Hall plateaus) are observed, and the value of the Hall resistance on these plateaus is proportional

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