A plate of p-type semiconductor with a width d = 1 cm and a length l = 3 cm is placed in a uniform magnetic field of strength H = 0.5 T. A constant voltage U = 180 V is applied to the ends of the plate (along an edge with size l). In this case, the transverse Hall potential difference turned out to be equal to V = 5 mV. Determine the concentration and mobility of holes in a given semiconductor, the resistivity of which is p = 0.03 Ohm•m.

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